Advantages of GeO2 as a power semiconductor
01
Feature 01
P-type and n-type dopabilties applicable to normally-off GeO₂ MOSFETs.
02
Feature 02
Inexpensive bulk crystals and epitaxial layers
03
Feature 03
UWBG semiconductor with high potential as a power semiconductor
GeO2 Semiconductor Products
6inch substrate
(Under development)
4inch Epi wafer/substrate
(Under development)
2inch Epi wafer/substrate
(Under development)
Power devices
(Under development)
Crystal growth system/ Thin film fabrication services
- PhantomSVD(Phantom Spatial Vapor Deposition) equipment: Crystal growth equipment based on new principles evolved from the mist CVD method
- Phantom surface processing equipment for roughening, etc.: safe, inexpensive, highly efficient, and high quality
- Development and improvement services for novel functional membranes (new metal oxide membranes, new metal membranes, new organic membranes, etc.)