Advantages of GeO2 as a power semiconductor
01
Feature 01
P-type and n-type dopabilties applicable to normally-off GeO₂ MOSFETs.
02
Feature 02
Inexpensive bulk crystals and epitaxial layers
03
Feature 03
UWBG semiconductor with high potential as a power semiconductor
GeO2 Semiconductor Products
(開発中)
6inch substrate
(Under development)
Power devices
(Under development)
Paid sample
10mm square
GeO₂ on TiO₂ substrate
(Paid samples available)
- This is a germanium dioxide heteroepitaxial substrate on a TiO2 substrate with the same crystal structure as germanium dioxide.
- Application: For basic research
For more details, please contact us.