Low loss / Compact size
Semiconductor materials with large forbidden bands (band gaps) tend to have large dielectric breakdown field strengths. On the other hand, as a rule of thumb, there is a trade-off relationship between the size of the band gap and the density of major carriers. The larger the band gap, the more the material behaves as an insulator, and the less it exhibits electrical properties as a semiconductor. Searching for materials that have a high balance of these contradictory properties forms an important guideline in the research of new power semiconductor materials. Our company focuses on germanium dioxide (GeO₂), which is currently under development, and aim to implement it in society.
High voltage resistance
As GeO₂ has a large band gap and is expected to be produced at low cost in both bulk and thin membranes, it is expected to create a market for high voltage resistance and high output, which is difficult to achieve with existing materials. For example, it is expected to be used in the creation of ultra-high output power supply and motors, small inverters, power devices for outer space, radiation-resistant power devices, etc.
